Download Analog IC Design with Low-Dropout Regulators (LDOs) by Gabriel Rincon-Mora PDF

By Gabriel Rincon-Mora

Master Analog Integrated-Circuit Design

Design, research, and construct linear low-dropout (LDO) regulator ICs in bipolar, CMOS, and biCMOS semiconductor strategy applied sciences. This authoritative consultant deals a distinct emphasis on embedded LDO layout. via intuitive motives and precise illustrations, the publication indicates how one can positioned those theories to paintings growing analog ICs for the newest transportable, battery-powered devices.

Analog IC layout with Low-Dropout Regulators information the total product improvement cycle-from defining pursuits and choosing parts to blueprinting, assembling, and fine-tuning functionality. paintings with semiconductors, hire detrimental suggestions, deal with fluctuating so much, and embed regulators in ICs. additionally, you will the best way to construct prototypes, practice exams, and combine system-on-chip (SoC) performance. observe how to:

  • Design, try, and gather BJT-, MOSFET-, and JFET-based linear regulators
  • Use present mirrors, buffers, amplifiers, and differential pairs
  • Integrate suggestions loops, damaging suggestions, and regulate limits
  • Maintain an autonomous, reliable, noise-free, and predictable output voltage
  • Compensate for low enter present and broad voltage swings
  • Optimize accuracy, potency, battery lifestyles, and integrity
  • Implement overcurrent safeguard and thermal-shutdown features
  • Establish energy and working limits utilizing characterization recommendations

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Additional resources for Analog IC Design with Low-Dropout Regulators (LDOs) (Electronic Engineering)

Example text

Just as electrons above EC are charge carriers, holes below EV, given their complementary features, are also charge carriers. The energy separation between the two bands is constant for a given material and commonly referred to as the band gap (EBG). Fermi level EF, which lies between EC and EV, is an abstract variable representing the energy level where a 50% probability of finding a charge carrier exists—this probability decreases exponentially for increasing and decreasing energy levels. This is not to say, however, a charge carrier exists at or around EF, because none can reside in the band gap, only outside the bands.

A). com) Copyright © 2009 The McGraw-Hill Companies. All rights reserved. Any use is subject to the Terms of Use as given at the website. System Considerations System Considerations 31 across the power pass device to fully supply load current iLOAD. Total response time Δt1 therefore approximates to Δt1 ≈ ⎛ Δi ⎞ ⎛ Δv ⎞ 0 . 37 0 . 18) where gmp is the transconductance of the power pass device. 37/ BWCL. This response-time improvement and independence to CPAR result at the expense of quiescent-current flow, that is to say, reduced power efficiency and battery life.

Circuits that tolerate low VIN values) are appealing in power-management applications. Compensation Stability is another parameter to consider and, along with transient accuracy, sets the acceptable range for output capacitance COUT and resistance RESR. If the dominant low-frequency pole is at the output, COUT must exceed a certain value to guarantee stability. Similarly, given load-dump demands, COUT must exceed a minimum target to prevent the output from drooping below or above its specified accuracy limits.

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