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By G. Russell, I. Sayers

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6 does not suffer from the typical discontinuity in the moderate region exhibited by simpler MOSFET models [10]. MOSFET Modeling for Companding 33 34 4. LOW-VOLTAGE CMOS LOG COMPANDING ANALOG DESIGN Noise Equations A small signal and spectral model is chosen for the intrinsic noisy phenomena of the MOS transistor. Due to their random nature, the equivalent noise sources are described in terms of power spectral densities (PSD). The main expressions are again derived from the EKV model, although they have been rewritten here as equivalent parallel current sources between drain and source terminals.

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Enz. A 1-V CMOS Log-Domain Integrator. In Proceedings of the International Symposium on Circuits and Systems, volume II, pages 685–688. IEEE, 1999. Vittoz. A Log-Domain CMOS Transcapacitor: Design, Analysis and Applications. Journal of Analog Integrated Circuits and Signal Processing, Kluwer Academic Publishers, 22:195–208, 2000. Tsividis. Operation and Modeling of the MOS Transistor. Electrical Engineering Series. McGraw-Hill International Editions, 1987. Chapter 2 MOSFET MODELING FOR COMPANDING Abstract 1.

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